? 2009 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c - 100 v v dgr t j = 25 c to 150 c, r gs = 1m ? - 100 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c - 57 a i dm t c = 25 c, pulse width limited by t jm - 225 a i a t c = 25 c - 90 a e as t c = 25 c 2.5 j dv/dt i s i dm , v dd v dss , t j 150 c 10 v/ns p d t c = 25 c 190 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c v isol 50/60 hz, rms t = 1min 2500 v~ i isol 1ma t = 1s 3000 v~ m d mounting force 20..120 / 4.5..27 n/lb. weight 5 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = - 250 a -100 v v gs(th) v ds = v gs , i d = - 250a - 2.0 - 4.0 v i gss v gs = 20v, v ds = 0v 100 na i dss v ds = v dss , v gs = 0v - 25 a t j = 125 c - 200 a r ds(on) v gs = -10v, i d = - 45a, note 1 27 m ? polarp tm power mosfet p-channel enhancement mode avalanche rated IXTR90P10P v dss = - 100v i d25 = - 57a r ds(on) 27m ? ? ? ? ? g = gate d = drain s = source isolated tab isoplus247 e153432 ds99985a(03/09) features z silicon chip on direct-copper bond (dcb) substrate - ul recognized package - isolated mounting surface - 2500v electrical isolation z avalanche rated z high current handling capability z fast intrinsic diode z the rugged polarp tm process z low q g z low drain-to-tab capacitance z low package inductance advantages z easy to mount z space savings z high power density applications z high-side switches z push pull amplifiers z dc choppers z automatic test equipment z current regulators
IXTR90P10P ixys reserves the right to change limits,test conditions, and dimensions. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1: pulse test, t 300 s; duty cycle, d 2%. isoplus247 (ixtr) outline symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = -10v, i d = - 45a, note 1 22 37 s c iss 5800 pf c oss v gs = 0v, v ds = - 25v, f = 1mhz 1990 pf c rss 510 pf t d(on) 25 ns t r 77 ns t d(off) 54 ns t f 60 ns q g(on) 120 nc q gs v gs = -10v, v ds = 0.5 ? v dss , i d = - 45a 23 nc q gd 60 nc r thjc 0.66 c/w r thcs 0.15 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v - 90 a i sm repetitive, pulse width limited by t jm - 360 a v sd i f = - 45a, v gs = 0v, note 1 - 3.3 v t rr 144 ns q rm 0.92 c i rm -12.8 a resistive switching times v gs = -10v, v ds = 0.5 ? v dss , i d = - 45a r g = 3 ? (external) i f = - 45a, -di/dt = -100a/ s v r = - 50v, v gs = 0v
? 2009 ixys corporation, all rights reserved IXTR90P10P fig. 1. output characteristics @ 25oc -90 -80 -70 -60 -50 -40 -30 -20 -10 0 -2.2 -2.0 -1.8 -1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0.0 v ds - volts i d - amperes v gs = -10v - 9v - 5 v - 6 v - 8 v - 7 v fig. 2. extended output characteristics @ 25oc -240 -220 -200 -180 -160 -140 -120 -100 -80 -60 -40 -20 0 -30 -27 -24 -21 -18 -15 -12 -9 -6 -3 0 v ds - volts i d - amperes v gs = -10v - 6 v - 5 v - 8 v - 9 v - 7 v fig. 3. output characteristics @ 125oc -90 -80 -70 -60 -50 -40 -30 -20 -10 0 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 v ds - volts i d - amperes v gs = -10v - 9v - 6 v - 5 v - 8 v - 7 v fig. 4. r ds(on) normalized to i d = - 45a vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = -10v i d = - 90 a i d = - 45 a fig. 5. r ds(on) normalized to i d = - 45a vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -180 -160 -140 -120 -100 -80 -60 -40 -20 0 i d - amperes r ds(on) - normalized v gs = -10v t j = 25oc t j = 125oc fig. 6. maximum drain current vs. case temperature -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade i d - amperes
IXTR90P10P ixys reserves the right to change limits,test conditions, and dimensions. fig. 7. input admittance -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 -7.5 -7.0 -6.5 -6.0 -5.5 -5.0 -4.5 -4.0 -3.5 v gs - volts i d - amperes t j = - 40oc 25oc 125oc fig. 8. transconductance 0 5 10 15 20 25 30 35 40 45 50 55 60 -110 -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode -240 -220 -200 -180 -160 -140 -120 -100 -80 -60 -40 -20 0 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 0 102030405060708090100110120 q g - nanocoulombs v gs - volts v ds = - 50v i d = - 45a i g = -1ma fig. 11. capacitance 100 1,000 10,000 -40 -35 -30 -25 -20 -15 -10 -5 0 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 1,000 1 10 100 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 1ms 100s r ds(on) limit 10ms dc - - - - - 100ms - -
? 2009 ixys corporation, all rights reserved ixys ref: t_90p10p(b7) 5-13-08 IXTR90P10P fig. 13. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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